Conduction Band Offset of Strained InGaP by Quantum Well Capacitance-Voltage Profiling

摘要

The conduction band alignment of compressively strained In_(1-x)Ga_xP relative to lattice matched InGaP/GaAs has been determined by capacitance-voltage profiling. A modified version of Kroemer's capacitance-voltage profiling method is developed wherein a quantum well is profiled instead of a single heterojunction. A one-dimensional Poisson-Schrodinger solver was used to fit the reconstructed carrier profiles corresponding to a value of ΔE_c at varying temperatures. Schottky barrier diode/structures containing a single strained InGaP quantum well were grown by low pressure metalorganic chemical vapor deposition. The two strained compositions studied contained 35 and 31% gallium. Conduction band offsets of 101 and 131 meV were found for the 35 and 31% samples, respectively, with an estimated accuracy of ±5 meV. These results agreed closely with values predicted by empirical calculations.