机译:化学CoWP作为化学铜和硅之间的扩散屏障
Department of Materials Science and Engineering National Formosa University 64 Wunhua Road Huwei Yunlin Taiwan 632;
Institute of Electro-Optical and Materials Science National Formosa University 64 Wunhua Road Huwei Yunlin Taiwan 632;
Department of Materials Science and Engineering National Formosa University 64 Wunhua Road Huwei Yunlin Taiwan 632;
Department of Materials Science and Engineering National Formosa University 64 Wunhua Road Huwei Yunlin Taiwan 632;
Department of Materials Engineering National Pingtung University of Science and Technology 1 Shuehfu Road Neipu Pingtung Taiwan 912;
Electroless CoWP; diffusion barrier; electroless Cu; silicon;
机译:磷对化学CoWP膜铜扩散阻挡性能的影响
机译:偏压温度应力下化学扩散阻挡层和有机硅烷单层对铜扩散的阻挡层完整性
机译:混合穿通方法可解决CoWP / SiCN混合势垒的化学相关集成问题
机译:通过无电镀将牛仔覆盖屏障的选择性形成在Cu互连上
机译:界面电化学和表面表征:氢封端的硅,在热解光刻胶膜上化学沉积的钯和铂,在铱上电沉积铜。
机译:通过以溶解氧为氧化剂的底物增强金属催化的硅化学刻蚀连续生产硅纳米线
机译:化学镀法在铜印制板上扩散阻挡层的开发