Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis

摘要

We present a systematic study on the admittance characterization of surface trap states in unpassivated and SiN _x -passivated Al_0.83In_0.17N/AlN/GaN heterostructures. C–V and G/ω–V measurements were carried out in the frequency range of 1 kHz to 1 MHz, and an equivalent circuit model was used to analyze the experimental data. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming models in which traps are located at the metal–AlInN surface. The density (D _t) and time constant (τ _t) of the surface trap states have been determined as a function of energy separation from the conduction-band edge (E _c − E _t). The D _st and τ _st values of the surface trap states for the unpassivated samples were found to be D_st @ (4 - 13) ×1012 D_{rm{st}} cong (4 - 13) times 10^{12} eV - 1 cm - 2 {hbox{eV}}^{ - 1} {hbox{cm}}^{ - 2} and τ _st ≈ 3 μs to 7 μs, respectively. For the passivated sample, D _st decreased to 1.5 ×1012 1.5 times 10^{12} eV - 1 cm - 2 {hbox{eV}}^{ - 1} {hbox{cm}}^{ - 2} and τ _st to 1.8 μs to 2 μs. The density of surface trap states in Al_0.83In_0.17N/AlN/GaN heterostructures decreased by approximately one order of magnitude with SiN _x passivation, indicating that the SiN _x insulator layer between the metal contact and the surface of the Al_0.83In_0.17N layer can passivate surface states.