Ti-O Direct-Current-Sintered Bodies and Their Use for Sputter Deposition of TiO Thin Films: Fabrication and Characterization

摘要

Ti-50at.%O and Ti-40at.%O sintered bodies were fabricated by direct-current sintering using Ti and TiO₂ powders as starting materials. Their microstructures were investigated by x-ray diffraction and optical microscopy. Ti-O thin films were deposited on glass substrates by radiofrequency (RF) magnetron sputtering using a Ti-50at.%O or Ti-40at.%O sintered body as a sputtering target. A crystalline TiO thin film was obtained using a Ti-40at.%O sputtering target, while an amorphous or Ti₆O₁₁ thin film was obtained using a Ti-50at.%O sputtering target. The electric resistivity of the TiO thin films was 450 μΩ cm to 1000 μΩ cm depending on their thickness.