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首页> 外文期刊>Journal of Electronic Materials >Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples
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Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples

机译:Co / Sn / Cu扩散对中界面反应的耦合效应

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摘要

Co/Sn/Cu sandwich couples formed by electroplating were examined to investigate the interaction between Cu and Co across the Sn layer for various Sn thicknesses from 75 μm to 580 μm. At the Sn/Cu interface, both Cu6Sn5 and Cu3Sn are formed. Unlike in a binary Sn/Cu couple, Cu6Sn5 has a spiked structure for couples with a thinner Sn layer. At the Co/Sn interface, two phases, CoSn3 and (Cu,Co)6Sn5, were simultaneously observed after reaction at 200°C. Remarkably, the CoSn3 reaction layer was much thinner than that in the binary Sn/Co couple. Furthermore, only the (Cu,Co)6Sn5 phase was formed at 150°C. This finding indicates that CoSn3 growth is significantly inhibited in Co/Sn/Cu sandwich couples due to the Cu substrate.
机译:检查了通过电镀形成的Co / Sn / Cu夹心对,研究了厚度范围从75μm到580μm的整个Sn层上Cu和Co之间的相互作用。在Sn / Cu界面上,形成了Cu 6 Sn 5 和Cu 3 Sn。与二元Sn / Cu对不同,Cu 6 Sn 5 具有尖峰结构,用于偶合较薄的Sn层。在200℃反应后,同时观察到Co / Sn界面的两个相CoSn 3 和(Cu,Co) 6 Sn 5 。 ℃。值得注意的是,CoSn 3 反应层比二元Sn / Co对薄得多。此外,在150℃下仅形成(Cu,Co) 6 Sn 5 相。该发现表明,由于Cu底物,Co / Sn / Cu夹心对中CoSn 3 的生长受到显着抑制。

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