Crystallization of fine silicon particles from silicon monoxide

摘要

Nanometer scaled single-crystal particles of Si have been prepared by heating of amorphous SiO in an inert atmosphere. X-ray powder diffraction data on the quenched specimens have revealed that the Si crystallization in co- operation with the disproportionation reaction of SiO to Si and SiO_2 starts around 850 deg C and becomes very rapid above 1000 deg C. High-resolution electron diffraction observations show that below 1000 deg ne Si particles precipitate in a single crystal form with a diameter of 4-5 nm, and the amount, rather than the size, of the precipitated particles gradually increases with the annealing time.