Electron microscopic observation of VPE-grown homo-epitaxial BP film initiated from BP eaves layer

摘要

A boron monophosphide (BP) film was vapor-grown on (100)-Si which had been etched to form quadrilateral shaped pits bounded by four {111}-Si planes. Accompanying with epitaxial relationship of (100), [110]Si||(100), [110]BP, an eaves layer of BP overhanging the pit was obtained. A homo-epitaxial BP films also grew inside the pit on the underside of the BP eaves layer. In contrast to the hetero-epitaxial BP layer on the (100)-Si surface, the homo-epitaxially grown BP film generated no extra electron diffraction due to twins or stacking faults. The homo-epitaxial growth technique utilizing the BP eaves layer is useful to obtain BP films with fewer crystalline imperfections.