Ordered arrays of rare-earth silicide nanowires on Si(001)

摘要

Ordered arrays of self-assembled ErSi_(2-x), SmSi_(2-x), and DySi_(2-x) nanowires aligned along Si [110] have been grown at 600℃ on Si(001) vicinal substrates. The nanowires grow perpendicular to the Si dimer rows and are 1.5-5 nm wide, approximately 2 monolayers high and up to 1μm long. These nanowires were characterized in situ with scanning tunneling microscopy.