Scaling relationships for analyzing kinetics in GaN epitaxial lateral overgrowth

摘要

In the epitaxial lateral overgrowth of GaN, mass transport and the effects of crystal-growth kinetics lead to a wide range of observed feature growth rates depending on the dimensions of the masked and exposed regions. Based on a simple model, scaling relationships are derived that reveal the dynamic similarity of growth behavior across pattern designs. A time-like quantity is introduced that takes into account the varying transport effects, and provides a dimensionless time basis for analyzing crystal growth kinetics in this system. Illustrations of these scaling relationships are given through comparison with experiment.