Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer

摘要

Epitaxial Lift-Off of ZnSe/ZnCdSe and MgS/ZnCdSe quantum well structures from their GaAs substrate has been achieved by using highly reactive MgS as the sacrificial layer. This technique has proved possible in II-VI semiconductor materials due to the huge contrast in the etch rates between the metastable MgS release layer and the II-VI quantum well materials. In this paper, we outline the epitaxial lift-off technique used and confirm the success of the new method using photoluminescence experiments taken before and after lift-off. © 2005 Elsevier B.V. All rights reserved.