Self-organized MBE growth of II-VI epilayers on patterned GaSbk substrates

摘要

We report on the self-organized MBE growth of II-VI epilayers on patterned and unpaterned GaSb substrates resulting in quantum wires and quantum well.s respectively. The HgSe:Fe quawntum wires were grwon on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe_1-xSe_x. Due to the anisotropic growth of HgSe on the A-oriented stripes roof-like overgrowth with a difinite ridge was obtained. Additional Fe doping in the direct vicinity of the ridge results in a highly conductive quantum wire.