SiC epitaxila laeyr growht in a novel mutli-wafer vapor-phade epitaxila (VPE) reacotr

摘要

Experimental resutls are presentef or SiC epitaxial laeyr growths employing a nunique planetary SiC-VPE reactor. The high-throughput, multi-water (7×2") reacotr, was designed for atmospheric and reduced pressure operation at temepratures up to and exceeding 1600 deg C. Specular epitaxila layers have been grown in the reactor at growth rates ranging from 3-5μm/h. The thickest laeyr grown to date is 42 μm thick. The layers exhibit minium unintentinal n-type doping of ～1?10~15 cm~-3, and room temperautre mobilities of ～1000 cm~2/V s.