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Preparation and properties of bulk ZnSe: Cr single crytals

机译:块状ZnSe:Cr单晶的制备与性能

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Cr-doped zinc selenide signle crystals have been prepared by a two stage process. In the firs stage, undoped signle crystals were grown by a sublimation travelign heater method (STHM) without seeding. The high quality of the as-grown crystals was confirmed by double crystal X-ray diffraction, which showed the full-width half-maximum (FWHM) of the rocking curves to be less than 20 arcsec on the (2 2 0) diffracion planes of the crystals. Selective chemicla etching showed dislocation density of these faces to be less than 5×10~4 cm~-2. IN the second stage, the ZnSe crystals were Cr-doped by the method of the thermal diffusion form a solid metal source. Cr concentration of 3.3×10~19 cm~-3, absorption coefficient of more than 30 cm~-1 at 1750 nm, and passive losses of less than 0.3 cm~-1 at 2500 nm were obtained under optimal technological conditions.
机译:Cr掺杂的硒化锌锌离子晶体是通过两步法制备的。在第一阶段,通过升华Travelign加热器法(STHM)生长未掺杂的硅藻土晶体而不进行晶种。双晶体X射线衍射证实了生长态晶体的高质量,这表明在(2 2 0)衍射平面上摇摆曲线的全宽半最大值(FWHM)小于20 arcsec。的晶体。选择性化学蚀刻显示这些面的位错密度小于5×10〜4 cm〜-2。在第二阶段,通过热扩散的方法将ZnSe晶体掺入Cr,形成固态金属源。在最佳工艺条件下,得到的Cr浓度为3.3×10〜19 cm〜-3,在1750 nm处的吸收系数大于30 cm〜-1,在2500 nm处的钝化损耗小于0.3 cm〜-1。

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