Defect studies in Cd_(0.95)Mn_90.05)Te: Ga by DLTS

摘要

In this paper we present the results ofour investigations of deep levels in bulk Ga-doped Cd_(0.95)Mn_(0.05)Te mixed crystal by deep level transient spectroscopy (DLTS) method. Four electron traps have been found with activtion energies obtained from Arrhenius plots equal to 0.26, 0.53, 0.55 and 0.83 eV. For the first and the second of the traps electron capture processes have been found to be thermally activated with energetic capture barriers equal 0.15 and 0.23 eV, respectively.