Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode

摘要

We describe the successful homoepitaxial growth of ZnO layers on oxygen-face ZnO substrates by metalorganic vapor-phase epitaxy in two-dimensional growth mode. In detail, we discuss the impact of the oxygen/zinc precursor ratio using N_2O and O_2 as oxygen precursors, growth temperature, and reactor pressure on structural properties and surface morphology as obtained by X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy measurements. Optimizing the growth parameters leads to smooth layers, ending up in a mirror-like surface grown in two-dimensional growth mode. The structural layer properties are found to be significantly governed by the substrate properties.