Modeling and process design of Ill-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

摘要

The metalorganic vapor-phase epitaxy (MOVPE) growth of GaN from TMGa and NH_3 at higher process pressures up to near-atmospheric pressure in commercial production scale multi-wafer reactors is investigated. The Planetary Reactor~® and close coupled showerhead reactor are compared and their suitability for near-atmospheric pressure growth is demonstrated. Advanced model development and its validation by growth experiments are carried out with particular emphasis on gas phase reaction kinetics and nucleation dynamics. Both are recognized to be crucial for nitride MOVPE at elevated pressures. Process and reactor design improvements to enhance growth efficiency of GaN at elevated pressures are discussed and the physical origin of the pressure dependence of growth efficiency is analyzed. Model predictions and growth experiments are in good agreement.