Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy

Yik-Khoon Ee; Hongping Zhao; Ronald A. Arif; Muhammad Jamil; Nelson Tansu

首页> 外文期刊>Journal of Crystal Growth >Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy

【24h】

Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy

机译：通过有机金属气相外延生长在520 nm处发射的GaN上的自组装InGaN量子点

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Self-assembled InGaN quantum dots (QDs) have been grown using metalorganic vapor-phase epitaxy (MOVPE), without using anti-surfactant. Using 120 s annealing, InGaN QDs have been successfully formed with a circular base diameter of 40 nm and an average hei

机译：自组装的InGaN量子点（QD）已使用金属有机气相外延（MOVPE）生长，而未使用抗表面活性剂。使用120 s退火，已成功形成InGaN QD，其基极直径为40 nm，平均hei

著录项

来源
《Journal of Crystal Growth》 |2008年第9期|p.2320-2325|共6页
作者
Yik-Khoon Ee; Hongping Zhao; Ronald A. Arif; Muhammad Jamil; Nelson Tansu;
展开▼
作者单位

Department of Electrical and Computer Engineering, Center for Optical Technologies, Lehigh University, Bethlehem, PA 18015, USA;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Low-dimensional structures; A1. Nanostructures; A3. Metalorganic chemicalvapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;

机译：A1。低维结构;A1。纳米结构;A3。金属有机化学气相沉积;B1。氮化物;B2。半导体III-V材料;

相似文献

外文文献
中文文献
专利

1. Indium incorporation in In-rich In_xGa_(1-x)As/GaAs layers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dots [J] . Guillaume Saint-Girons, Isabelle Sagnes, Gilles Patriarche Physical review. B, Condensed Matter And Materials Physics . 2006,第4期

机译：低压金属有机气相外延生长富In_xGa_（1-x）As / GaAs层中的铟掺入及其对自组装量子点生长的影响
2. InAs/InP(001) quantum dots emitting at 1.55 μm grown by low-pressure metalorganic vapor-phase epitaxy [J] . A. Michon, G. Saint-Girons, G. Beaudoin, Applied Physics Letters . 2005,第25期

机译：低压金属有机气相外延生长以1.55μm发射的InAs / InP（001）量子点
3. Comparison of blue and green InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy [J] . Y. D. Qi, H. Liang, D. Wang, Applied Physics Letters . 2005,第10期

机译：金属有机气相外延生长的蓝色和绿色InGaN / GaN多量子阱发光二极管的比较
4. MOCVD Epitaxy and Optical Properties of Self-Assembled InGaN Quantum Dots via Stranski-Kastranow Growth Mode Emitting at 520-nm [C] . Yik-Khoon Ee, Ronald A. Arif, Muhammad Jamil, Conference on Lasers Electro-Optics Quantum Electronics and Laser Science Conference . 2007

机译：MOCVD通过STRANSKI-KASTRANOW生长模式自组装INGAN量子点的外延和光学性质在520纳米下发射
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers [O] . Wenbin Lv, Lai Wang, Jiaxing Wang, 2012

机译：具有优化的GaN势垒的InGaN / GaN多层量子点黄绿色发光二极管
7. Green Electroluminescence from Radial mPlane InGaN Quantum Wells Grown on GaN Wire Sidewalls by MetalOrganic Vapor Phase Epitaxy [O] . -1

机译：通过金属机气相外延在GaN线侧壁上生长的径向厘普兰量子孔的绿色电致发光
8. Properties of InP Self-Assembled Quantum Dots Embedded in In0.49(Al(x) Ga(1-x))0.51P Grown by Metalorganic Chemical Vapor Deposition. [R] . Dupuis, R. D., Ryou, J. H., Reddy, C. V., 2001

机译：嵌入In0.49（al（x）Ga（1-x））0.51p金属有机化学气相沉积Inp自组装量子点的性质。

Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅