Growth and characterization of GalnAsP/InP-based Geiger-mode avalanche photodiodes

D.C. Chapman; C.J. Vineis; D.C. Oakley; A. Napoleone; G.M. Smith; E.K. Duerr; K.E. Jensen; J.P. Donnelly; K.A. Mclntosh; S. Verghese

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Growth and characterization of GalnAsP/InP-based Geiger-mode avalanche photodiodes

机译：基于GalnAsP / InP的盖革模式雪崩光电二极管的生长和表征

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Geiger-mode avalanche photodiodes (GM-APDs) grown by organometallic vapor phase epitaxy are of interest for several low-light-level applications, including laser radars and single-photon-counting optical communications. Materials systems based on GalnAsP

机译：通过有机金属气相外延生长的盖革模式雪崩光电二极管（GM-APD）对于包括激光雷达和单光子计数光通信在内的几种微光级应用很感兴趣。基于GalnAsP的材料系统

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来源
《Journal of Crystal Growth》 |2008年第9期|p.2365-2369|共5页
作者
D.C. Chapman; C.J. Vineis; D.C. Oakley; A. Napoleone; G.M. Smith; E.K. Duerr; K.E. Jensen; J.P. Donnelly; K.A. Mclntosh; S. Verghese;
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作者单位

Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood St., Lexington, MA 02420-9108, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. Organometallic vapor phase epitaxy; B2. Semiconducting III-V materials; B3. Infrared devices;

机译：A3。有机金属气相外延;B2。半导体III-V材料;B3。红外线设备;

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1. Degradation of InP-based geiger-mode avalanche photodiodes due to proton irradiation [J] . Harris R.D., Farr W.H., Becker H.N. Journal of Modern Optics . 2011,第3a4期

机译：基于质子辐照的基于InP的盖革模式雪崩光电二极管的降解
2. Degradation of InP-based Geiger-mode avalanche photodiodes due to proton irradiation [J] . Richard D. Harrisa* William H. Farra amp, Heidi N. Beckera Journal of Modern Optics . 2011,第3a4期

机译：基于质子辐照的基于InP的盖革模式雪崩光电二极管的降解
3. A test beam setup for the characterization of the Geiger-mode avalanche photodiode technology for particle tracking [J] . E. Vilella, O. Alonso, J. Trenado, Nuclear Instruments & Methods in Physics Research . 2012,第期

机译：用于表征Geiger模式雪崩光电二极管技术以进行粒子跟踪的测试光束设置
4. CMOS Geiger-mode avalanche photodiode detectors for time and CMOS Geiger-mode avalanche photodiode detectors for time and [C] . William G. Lawrence, Tani Tozian, Christopher Stapels, SPIE Conference on MOEMS and Miniaturized Systems . 2010

机译：CMOS Geiger-Mode Avalanche Photoode探测器的时间和CMOS Geiger-Mode雪崩光电二极管探测器
5. Characterization of silicon Geiger-mode avalanche photodiodes with novel device architecture [D] . Kolb, Kimberly E. 2011

机译：新型器件架构表征硅盖革模式雪崩光电二极管
6. Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps [O] . Jheng-Jie Liu, Wen-Jeng Ho, Cho-Chun Chiang, 2018

机译：在工作速度超过10 Gbps的导电基板上制造平面型顶部照明的基于InP的雪崩光电探测器并进行表征
7. InP-based Geiger-mode avalanche photodiode arrays for three-dimensional imaging at 1.06 μm [O] . Mark A. Itzler, Mark Entwistle, Mark Owens, 2014

机译：基于Inp的盖革模式雪崩光电二极管阵列，用于1.06μm的三维成像

Growth and characterization of GalnAsP/InP-based Geiger-mode avalanche photodiodes

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