Structural And Photoluminescence Properties Of Single Crystalline Sno_2:in Films Deposited On α-al_2o_3 (0 0 0 1) By Mocvd

摘要

Indium-doped tin oxide (SnO_2:In) films have been prepared on α-Al_2O_3 (00 01) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The structural and photoluminescence (PL) properties of the SnO_2:In films were investigated. The prepared samples were epitaxial single crystalline films having rutile structure of pure SnO_2 with the best single crystalline structure obtained at 4% (atomic ratio) of In concentration. A single ultra-violet (UV) PL peak near 339 nm was observed at room temperature (RT) for the 4% In-doped film. At a temperature of 14 K, another narrow PL peak located at 369 nm and a broad feeble peak near 493 nm were also observed. The corresponding PL mechanisms were investigated.