METHOD FOR FABRICATING SINGLE CRYSTALLINE LAYER USING FERROELECTRIC SINGLE CRYSTALLINE QUALITY BY PLD OR MOCVD METHOD

摘要

PURPOSE: A method for fabricating a single crystalline layer using ferroelectric single crystalline quality is provided to improve a dielectric characteristic, a piezoelectric characteristic, an electrical characteristic, a mechanical characteristic, and an electro-optic characteristic. CONSTITUTION: A bottom oxide layer having a Perovskite structure and a bottom electrode are formed on a silicon substrate or a ferroelectric single crystalline substrate. A ferroelectric single crystalline layer is deposited on the bottom oxide layer and the bottom electrode by using a PLD(Pulsed Laser Deposition) method and a MOCVD(Metal Organic Chemical Vapor Deposition) method. The thickness of the ferroelectric single crystalline layer is 0.1 to 20 micrometers.