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Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor

机译:立式MOCVD反应器带环槽基座结构的热输运模拟

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摘要

A new susceptor structure with a ring groove on the conventional column-shaped graphite susceptor is proposed for the vertical and induction heating MOCVD reactor, aimed at dividing the inner heat of susceptor into two parts, one of which accumulates on the upside and the other downside of the groove. The shape of the ring groove that changes the directions of heat conduction in the susceptor is optimized and validated by using finite element method (FEM). Compared with the conventional one, the optimized susceptor improves the uniformity of temperature distribution in the wafer and consequently promotes the growth characteristics.
机译:提出了一种用于立式感应加热MOCVD反应器的传统圆柱状石墨感受器上带有环形凹槽的新型感受器结构,旨在将感受器的内部热量分为两部分,其中一部分蓄积在上部,另一部分积聚在下部的凹槽。通过使用有限元方法(FEM)优化并验证了改变基座中导热方向的环形凹槽的形状。与传统的基座相比,优化的基座提高了晶片中温度分布的均匀性,从而提高了生长特性。

著录项

  • 来源
    《Journal of Crystal Growth》 |2009年第24期|4679-4684|共6页
  • 作者单位

    Key Laboratory of Fundamental Science for National on Wide Band-Cap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

    Key Laboratory of Fundamental Science for National on Wide Band-Cap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

    Key Laboratory of Fundamental Science for National on Wide Band-Cap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

    Key Laboratory of Fundamental Science for National on Wide Band-Cap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

    Key Laboratory of Fundamental Science for National on Wide Band-Cap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

    Key Laboratory of Fundamental Science for National on Wide Band-Cap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

    Key Laboratory of Fundamental Science for National on Wide Band-Cap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

    Key Laboratory of Fundamental Science for National on Wide Band-Cap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, ChinaQ;

    Key Laboratory of Fundamental Science for National on Wide Band-Cap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, ChinaQ;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Finite element; A1. Induction; A1. Temperature; A1. Susceptor; A1. Heat transfer; A3. MOCVD;

    机译:A1。有限元;A1。感应;A1。温度;A1。感受器;A1。传播热量;A3。化学气相沉积;

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