首页> 外文期刊>Journal of Crystal Growth >Three-dimensional visualization and characterization of morphology and internal microstructural features of primary silicon crystals in a cast Al-Si base alloy
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Three-dimensional visualization and characterization of morphology and internal microstructural features of primary silicon crystals in a cast Al-Si base alloy

机译:铸造铝硅基合金中初生硅晶体的形态和内部微结构特征的三维可视化和表征

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摘要

Primary Si crystals are usually present in the cast microstructures of near-eutectic, eutectic, and hyper-eutectic Al-Si base alloys. Three-dimensional digital images of individual primary Si crystals present in a permanent mold cast unmodified Al-12wt% Si-1wt% Ni base alloy are reconstructed using a combination of montage serial sectioning and three-dimensional digital image processing techniques. Octahedral, prismatic, and plate-like three-dimensional morphologies of the primary Si crystals are present in the microstructure. Some of the primary Si crystals contain interior regions/islands of Al-alloy that are completely enclosed in the corresponding Si crystals indicating certain variations in the crystal growth velocities during the evolution of these crystals. The boundaries of these interior regions/ islands are non-faceted smooth and curved indicating re-melting of the Al-rich islands and re-dissolution of some Si near these internal boundaries in the Al-alloy as a result of the heat generated by liquid-to-solid transformation of Si away from the islands.
机译:初生Si晶体通常存在于近共晶,共晶和过共晶Al-Si基合金的铸造组织中。使用蒙太奇连续切片和三维数字图像处理技术的组合,可以重建永久铸模未改性的Al-12wt%Si-1wt%Ni基合金中存在的单个原始Si晶体的三维数字图像。原始Si晶体的八面体,棱柱形和板状三维形态都存在于微结构中。一些初级Si晶体包含铝合金的内部区域/岛,其被完全封闭在相应的Si晶体中,表明在这些晶体的演化过程中晶体生长速度的某些变化。这些内部区域/岛的边界是无面的,光滑的和弯曲的,这表明由于液体产生的热量,富铝岛发生了重新熔化,并且在这些内部边界附近重新溶解了一些硅。 Si从岛到固体的转变。

著录项

  • 来源
    《Journal of Crystal Growth》 |2009年第19期|4454-4461|共8页
  • 作者单位

    School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA;

    School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA;

    School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA;

    General Motors, India Science Laboratory, Bangalore, India;

    General Motors, Research & Development, 30500 Mound Road, Warren, MI 48092-2031, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. crystal morphology; A1. solidification; A1. optical microscopy; A2. bulk crystal growth; A2. growth from melt; B1. metals;

    机译:A1。晶体形态A1。凝固;A1。光学显微镜A2。大块晶体生长;A2。融化成长;B1。金属;

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