机译:MOVPE生长的p-InGaAs / n-InP接口的表征
Department of electronic engineering, The University of electro-communications, Chofu-shi, Tokyo 182-8585, Japan;
Department of electronic engineering, The University of electro-communications, Chofu-shi, Tokyo 182-8585, Japan;
Department of electronic engineering, The University of electro-communications, Chofu-shi, Tokyo 182-8585, Japan;
Department of electronic engineering, The University of electro-communications, Chofu-shi, Tokyo 182-8585, Japan;
Department of electronic engineering, The University of electro-communications, Chofu-shi, Tokyo 182-8585, Japan;
A1. Characterization; A1. Interface; A3. Metalorganic vapor phase epitaxy; B3. Bipolar transistors;
机译:通过反射光谱法原位测定MOVPE生长的可见VCSEL中的界面粗糙度
机译:MOVPE生长的p型GaN层中空穴陷阱的低频电容深层瞬态光谱表征
机译:MOVPE生长的β-Ga_2O_3的深层噪声表征
机译:Pt-Ti / p-InGaAs / n-InP异质结构的电学表征
机译:硅基共集成的生物电和生物力学接口:在昆虫嗅觉神经接口,微型神经接口和心脏兴奋性表征中的应用。
机译:数字图像相关辅助FRCM - 具体界面粘合行为的实验表征
机译:C-V分析表征Movpe-生长的GaAs层