机译:高压下镓溶液中三元Al_xGa_(1-x)N的块状单晶生长
Laboratory for Solid State Physics, ETH Zurich, 8093 Zurich, Switzerland;
Laboratory for Solid State Physics, ETH Zurich, 8093 Zurich, Switzerland;
Laboratory for Solid State Physics, ETH Zurich, 8093 Zurich, Switzerland;
Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA;
Laboratory for Inorganic Chemistry, ETH Zurich, 8093 Zurich, Switzerland;
Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA;
Laboratory for Solid State Physics, ETH Zurich, 8093 Zurich, Switzerland;
Laboratory for Solid State Physics, ETH Zurich, 8093 Zurich, Switzerland;
A1. Phase diagram; B1. AlGaN; B1. Growth from solutions; B1. Hiph-pressure crystal growth; B1. Single-crystal growth; B2. Semiconducting III-V materials;
机译:使用AlCl_3和GaCl的HVPE生长Al_xGa_(1-x)N三元合金
机译:氢化物气相外延生长厚Al_xGa_(1-x)N三元合金
机译:镓溶液中氮化镓的高压生长
机译:(NH_4)_2 S溶液中Al_xGa_(1-x)As上GaS层的阳极生长
机译:激光脉冲激发下三元半导体镓(X)-铟(1-X)磷和砷化镓(1-X)-磷(X)的时间分辨光谱。
机译:反应气体压力对铜袋内表面上单晶石墨烯生长的影响
机译:受控蒸汽压力温度差法批量镓硒晶体生长及光吸收评价