Optimizing the growth of CoSi_2 film with oxide-mediated CoSi_2 template by silicon cap layer

摘要

Applying both template and Si cap technology, we achieved the epitaxial growth of CoSi_2 directly on Si(100) substrate by rapid thermal annealing (RTA). The crystal quality of CoSi_2 film is found to be significantly dependent on the Si cap thickness. In our work, a good-quality CoSi_2 film with a minimum of χ_(min) ～ 11.6% and 3.3Ω/square was obtained as a 15 nm Co with a subsequent 15 nm Si cap layer is deposited on an oxide-mediated CoSi_2 template and followed by an anneal at 1050 ℃ under N_2 protection; whereas too thin or thick Si cap layer will deteriorate the crystalline quality of CoSi_2. These experimental results are discussed in combination with the simulation of Rutherford backscattering spectroscopy and X-ray reflectivity.