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On the Bridgman growth of lead-tin selenide crystals with uniform tin distribution

机译:锡分布均匀的硒化铅锡晶体的布里奇曼生长

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The application of T-x-y phase diagram for the control of the crystal composition of alloy crystals during Bridgman growth is illustrated using (Pb_(1-x)Sn_x)_(1-δ)Se_(1+δ) solid solutions as an example. Within the framework of the proposed approach, the axial segregation can be minimised if the feed composition is chosen in the regions of phase diagram where the iso-mole-fraction lines are perpendicular to isotherms. For the system Pb-Sn-Se the component distribution in crystals grown from a melt with δ=0, a Se-rich melt (δ > 0) and a metal-rich melt (δ < 0) are discussed. Uniform crystals with x=(0.03-0.15) + 0.01 can be obtained from Se-rich melt (Se enrichment is 12-5 at%Se, T=1280-1200K). The use of metal-rich melt allows obtaining crystals with moderate segregation of 3-5 mol% SnSe for x=0.13-0.23 at 3-9 at% of metal enrichment and T=1270-1200 K and for x=0.35-0.45 at 25-35 at% of metal enrichment and T=1120-1050 K.
机译:以(Pb_(1-x)Sn_x)_(1-δ)Se_(1 +δ)固溶体为例,说明了T-x-y相图在布里奇曼生长过程中控制合金晶体的晶体组成的应用。在所提出方法的框架内,如果在等摩尔分馏线垂直于等温线的相图区域选择进料组成,则轴向偏析可以最小化。对于Pb-Sn-Se系统,讨论了由δ= 0的熔体,富硒熔体(δ> 0)和富金属熔体(δ<0)生长的晶体中的组分分布。可以从富含Se的熔体中获得x =(0.03-0.15)+ 0.01的均匀晶体(Se富集率为12-5 at%Se,T = 1280-1200K)。富含金属的熔体的使用允许获得具有3-5mol%SnSe的适度偏析的晶体,其中x = 0.13-0.23在3-9 at%的金属富集下且T = 1270-1200 K,并且x = 0.35-0.45 25-35 at%的金属富集度和T = 1120-1050 K.

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