Growth and characterization of epitaxial Fe_(0.8)Ga_(0.2)/ 0.69PMN-0.31PT heterostructures

摘要

Fe_(0.8)Ga_(0.2) films were deposited on bulk single-crystal (0 01) 0.69PMN-0.31 FT substrates by DC magnetron sputtering to make magnetoelectric bilayer composites. Films deposited at temperatures below 600 ℃ were X-ray amorphous. Films deposited at temperatures of 600 ℃ and higher exhibited a single-crystal (0 01) disordered BCC structure. The crystalline FeGa films demonstrate a 45° twisted cube-on-cube epitaxial relationship with the PMN-PT substrates. Heterostructures with an X-ray amorphous FeGa film exhibited zero magnetoelectric response. Heterostructures with a 990 nm epitaxial FeGa film exhibited a large inverse magnetoelectric voltage coefficient of 13.4(G cm)/V.