Photoluminescence properties of Pt_(1_x)Sn_xTe/CdTe quantum wells grown on (l00)-oriented GaAs substrates by molecular beam epitaxy

摘要

This paper describes photoluminescence (PL) properties of Pt_(1_x)Sn_xTe/CdTe quantum wells (QWs) grown on (100)-oriented GaAs substrates by molecular beam epitaxy. Despite the difference in crystal structure between these two tellurides, two-dimensional QWs with an abrupt heterointerface were formed at a low growth temperature of 220℃. Highly efficient midinfrared PL was observed from the QWs even at room temperature. Control of the Sn content in QWs allowed tuning of the PL peak energy in a wide range of a 3-5 μm atmospheric window. Considering effects of both the strain-induced band deformation and the quantum confinement in QWs, the transition energy observed was found to agree well with theoretical calculation.