机译:由气源分子束外延生长的AlInGaAs / InGaAs / InAs应变补偿三角量子阱的优化,用于2.1-2.4微米范围的激光应用
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China Graduate School of the Chinese Academy of Sciences, Beijing 100049, China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China Graduate School of the Chinese Academy of Sciences, Beijing 100049, China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China Graduate School of the Chinese Academy of Sciences, Beijing 100049, China;
photoluminescence; molecular beam epitaxy; quantum wells; arsenides;
机译:气体源分子束外延生长由InGaAs / InAs chi超晶格构成的应变补偿对称三角量子阱的性质
机译:气体源分子束外延生长InGaAs / InAs Chi超晶格组成的应变补偿对称三角量子阱的性质
机译:GaAs(001)上通过分子束外延生长的InAs / InGaAs / GaNAs应变补偿量子点的光学研究
机译:应变补偿的GAINNAS / GAASP / GAAS / GAAP量子孔通过气源分子束外延生长
机译:气体源分子束外延生长的应变平衡量子级联激光器(3-11μm)的建模,设计,生长和表征。
机译:分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质:热退火的影响
机译:金属有机分子束外延生长在GaNAs应变补偿层中的InAs量子点的光致发光研究
机译:有机金属气相外延生长的alInGaas / alGaas分离限制异质结构应变单量子阱二极管激光器