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首页> 外文期刊>Journal of Crystal Growth >Fabrication of pure-perovskite PMN-PT thin films on SrTiO_3 substrates using pulsed laser deposition
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Fabrication of pure-perovskite PMN-PT thin films on SrTiO_3 substrates using pulsed laser deposition

机译:使用脉冲激光沉积在SrTiO_3基底上制备纯钙钛矿PMN-PT薄膜

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摘要

Lead magnesium niobate-lead titanate ((1-x)Pb(Mg_(1/3)Nb_(2/3))O_(3-x)PbTiO_3 (x=0.20,0.33,0.50), PMN-PT) thin films have been successfully deposited on SrTiO_3(100) substrates by pulsed laser deposition (PLD). The result of X-ray diffraction (XRD) showed that the PMN-PT thin films were c-orientated. The effects of deposition conditions, such as deposition temperature, deposition oxygen pressure, pulsed laser repeated frequency, cooling rate, pulsed laser energy and post annealing, were studied first on thin-film quality. It was found that the deposition temperature was very different for the different mole fractions of the thin films. The range of the deposition temperature of high-qualitied thin films is very narrow, about ± 2 ℃. Such harsh conditions are rare in other thin films, which is also the main reason why PMN-PT thin films are very difficult to prepare.
机译:铌酸铅镁-钛酸铅((1-x)Pb(Mg_(1/3)Nb_(2/3))O_(3-x)PbTiO_3(x = 0.20,0.33,0.50),PMN-PT)薄膜已经通过脉冲激光沉积(PLD)成功地在SrTiO_3(100)衬底上沉积了SrTiO_3(100)。 X射线衍射(XRD)的结果表明,PMN-PT薄膜是c取向的。首先研究了沉积条件对薄膜质量的影响,例如沉积温度,沉积氧气压力,脉冲激光重复频率,冷却速率,脉冲激光能量和后退火。发现对于薄膜的不同摩尔分数,沉积温度非常不同。高品质薄膜的沉积温度范围非常狭窄,约为±2℃。这种苛刻的条件在其他薄膜中很少见,这也是PMN-PT薄膜很难制备的主要原因。

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  • 来源
    《Journal of Crystal Growth 》 |2010年第13期| P.1925-1928| 共4页
  • 作者单位

    Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, 50 East Huancheng Road, Kunming 650051, People's Republic of China;

    rnInstitute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, 50 East Huancheng Road, Kunming 650051, People's Republic of China;

    rnInstitute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, 50 East Huancheng Road, Kunming 650051, People's Republic of China;

    rnInstitute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, 50 East Huancheng Road, Kunming 650051, People's Republic of China;

    rnInstitute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, 50 East Huancheng Road, Kunming 650051, People's Republic of China Max-Planck-Institut fuer Festkorperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Federal Republic of Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. X-ray diffraction; A3. Laser epitaxy; B1. Oxides; B1. Perovskite; B2. Ferroelectric materials;

    机译:A1。 X射线衍射;A3。激光外延;B1。氧化物;B1。钙钛矿;B2。铁电材料;

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