机译:300 mm UHV / CVD冷壁反应器中基于硅烷和乙硅烷的外延(100)硅的低温生长
IBM Research, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA;
rnIBM Research, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA;
rnIBM Research, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA;
rnIBM Research, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA;
rnCanon ANELVA Corporation, 3300 North First Street, San Jose, CA 95134, USA;
rnCanon ANELVA Corporation, 3300 North First Street, San Jose, CA 95134, USA;
rnCanon ANELVA Corporation, 5-1 Kurigi 2 choume, Asao-ku, Kawasaki-shi, Kanagawa 215-8550, Japan;
rnCanon ANELVA Corporation, 5-1 Kurigi 2 choume, Asao-ku, Kawasaki-shi, Kanagawa 215-8550, Japan;
rnCanon ANELVA Corporation, 3300 North First Street, San Jose, CA 95134, USA;
A3. Chemical vapor deposition process; A3. Epitaxy; A3. Ultra-high vacuum; B1. Disilane; B2. Semiconducting silicon;
机译:在垂直热壁反应器中氯化物基CVD在4H-SiC外延生长期间消除硅液滴形成
机译:新的SIC外延生长过程,高达100%BPD,在150mm热壁CVD反应器上进行TED缺陷转换
机译:通过冷壁型UHV / CVD技术制造的超自对准选择性生长SiGe基极(SSSB)双极晶体管
机译:用于低温外延(100)硅的300mm冷壁UHV / CVD反应器
机译:利用硅烷和乙硅烷的超音速射流进行外延硅生长
机译:GaAs上的低温等离子体增强了CVD的硅外延生长:III-V / Si集成的新范例
机译:准串联APCVD反应器中高质量n型硅箔的外延生长