机译:通过优化的快门顺序和生长后退火,在临界厚度范围内的Si衬底上生长低缺陷密度的GaP层
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan;
rnDepartment of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan;
rnDepartment of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan;
rnDepartment of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan;
rnDepartment of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan;
A1. Defects; A1. Growth models; A1. Surfaces; A3. Migration enhanced epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting gallium compounds;
机译:四元合金(InAlGaAs)封顶的InAs / GaAs多层量子点异质结构的热稳定性,其生长速率,势垒厚度,种子量子点单层覆盖率和生长后退火均会发生变化
机译:硅基底上超薄MoO_3层的原子层沉积和生长后热退火:表面纳米结构的形成
机译:生长后退火对(111)3C-SiC层中生长的VLS缺陷性质和分布的影响
机译:生长后退火对(111)3C-SiC层中生长的VLS缺陷性质和分布的影响
机译:生长后退火的ZnSnN 2薄膜的沉积和表征。
机译:FEBID沉积的Cu(hfac)2Co2(CO)8和Me2Au(acac)金属前体的生长后退火的比较研究
机译:低温后生长退火对GaAs(001)上外延Fe层中各向异性应变的影响