机译:通过使用氢化物气相外延在ZnO模板上直接生长来制造独立的GaN层
Department of Nano-Semiconductor, National Korea Maritime University, Busan, Republic of Korea;
rnCenter for Interdisciplinary Research, Tohoku University, Sendai, Japan;
rnAdvanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Japan;
rnAdvanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Japan;
rnDepartment of Nano-Semiconductor, National Korea Maritime University, Busan, Republic of Korea;
rnCenter for Interdisciplinary Research, Tohoku University, Sendai, Japan;
rnCenter for Interdisciplinary Research, Tohoku University, Sendai, Japan;
rnAdvanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Japan;
rnDepartment of Nano-Semiconductor, National Korea Maritime University, Busan, Republic of Korea;
rnDivision of Electrical and Electronics Engineering, National Korea Maritime University, Busan, Republic of Korea;
rnCenter for Interdisciplinary Research, Tohoku University, Sendai, Japan;
A1. Freestanding GaN; A1. Polarity; A3. Chloride vapor phase epitaxy; B1. Zinc compounds; B1. Gallium compounds;
机译:在氢化物气相外延生长的低缺陷密度极性和非极性独立式GaN衬底上的时间分辨光致发光,正电子ni灭和Al0.23Ga0.77N / GaN异质结构生长研究
机译:在氢化物气相外延生长的低缺陷密度极性和非极性独立式GaN衬底上的时间分辨光致发光,正电子ni灭和Al_0.23Ga_0.77N / GaN异质结构生长研究
机译:氢化物气相外延生长的独立式GaN层的极性相关结构和光学性质
机译:用氢化物气相外延ZnO缓冲层GaN生长初期的横向和垂直生长研究
机译:通过氢化物气相外延形成氮化镓模板和独立衬底,用于III族氮化物器件的同质外延生长。
机译:氢化物气相外延生长在AlN纳米图案蓝宝石模板上的AlGaN外延层的结构和应力特性
机译:通过直接在连续氢化物气相外延(HVPE)过程中直接形成的多肽中间层(GaN)的自由型氮化镓(GaN)的生长