Growth and characterization of GaSe single crystal

摘要

A systematic study on structural and morphological properties of gallium selenide (GaSe) single crystals grown by vertical Bridgman technique is reported. A hexagonal structure of GaSe with lattice parameters a=b=3.74909 A and c= 15.90698 A has been confirmed with the help of powder X-ray diffraction (XRD). Respective values of strain (3.43 × 10~(-4) lin~(-2) m~(-4)) and dislocation density (1.35 × 10~(14)lin m~(-2)) have been calculated using powder X-ray diffraction results. High resolution X-ray diffraction (HRXRD) has been performed to ascertain the crystalline perfection of the grown single crystal. The scanning electron microscopy (SEM) and powder X-ray diffraction results are in good agreement as far as the grain size of the grown gallium selenide (GaSe) crystal is concerned.