机译:邻近切开的衬底对非极性a-GaN外延层中基础堆叠缺陷密度的影响
School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Republic of Korea;
School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Republic of Korea;
School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Republic of Korea,Korea Advanced Nano Fabrication Center, 906-10 lui-dong, YeongTong-gu, Suwon, Gyeonggi-do 443-270, Republic of Korea;
School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Republic of Korea;
A1. Planar defects; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials;
机译:在2度未切割的衬底上生长的4H-SiC外延层中的向内生长缺陷
机译:在未切割衬底上生长的4H-SiC外延层中的向内生长缺陷
机译:含不同缺陷密度的Si掺杂非极性a平面(11(2)over-bar0)GaN外延层在基面堆叠故障中的载流子定位
机译:在轴上和切割的6H-SIC基板上的GaN / Aln脱落器中的基底平面和棱柱形平面堆叠故障结构
机译:用于稳定双极二极管的4H-碳化硅的低基面位错密度外延层的生长。
机译:基于密度泛函理论的稀铝钼对FeNiCoCr基高熵合金堆垛层错和孪晶形成的影响
机译:通过持续逐层生长实现在4H-SiC(1(1)over-bar00)上生长的非极性4H-AlN,具有降低的堆垛层错密度
机译:通过横向外延过度生长在Ge涂层si衬底上生长的低位错密度Gaas外延层。