Interface engineering for improved growth of GaSb on Si(111)

摘要

Molecular beam epitaxy growth of GaSb growth on Si(111) substrates can be improved by pre-depositing Sb at high temperature. The (√3×√3) reconstruction obtained by this procedure results in closed heteroepitaxial GaSb layers in contrast to the direct growth on Si(111)(7×7) which produces islands. The growth is characterized by atomic force microscopy, electron and X-ray diffractions. On the basis of these investigations, the formation of an interface misfit dislocation network is discussed.