InP-based mid-infrared quantum-cascade laser grown on pre-patterned wafer

摘要

Quantum-cascade laser structure has been grown on InP:S(001) substrate pre-patterned with SiO_2 mask. The structure has grown coherently on InP substrate material in 40 urn-wide stripe-windows of the SiO_2 mask. Material deposited on SiO_2 most layer is polycrystalline. The structure was processed in wide ridges, involving polycrystalline material at the sides and in narrow ridges, consisting exclusively of the center part of the crystalline region. These two kinds of ridges have both lased at comparable threshold current densities of 2-3 kA/cm~2 at λ= 10.5μm at room temperature. This result demonstrates the feasibility of integration of quantum-cascade laser into integrated photonic circuits.