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Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation

机译:通过结合XRD和激光表征评估无注入器量子级联激光器

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摘要

We present a wavelength prediction procedure on the basis of X-ray measurements and simulations for InP-based injectorless quantum cascade laser (QCL) devices. These lasers show excellent performance in the mid-infrared wavelength range, but are very sensitive to growth deviations, which cause strong wavelength shifts and are a serious obstacle for applications like gas sensing. However, by XRD-simulations of the active region, which consists of InAs, AlAs, GalnAs and AlInAs, the thicknesses and compositions can be extracted and are used as input values for bandstructure calculations, so that a prediction for the resonance energy of the laser transition can be obtained. With this technique a wavelength evaluation of injectorless QCLs with 3% accuracy could be accomplished, which is an essential improvement in applications like gas sensing.
机译:我们基于X射线测量和基于InP的无注入器量子级联激光器(QCL)设备的仿真,提出了一种波长预测程序。这些激光器在中红外波长范围内表现出出色的性能,但是对生长偏差非常敏感,这会引起强烈的波长偏移,并且对于气体传感等应用是严重的障碍。但是,通过对由InAs,AlAs,GalnAs和AlInAs组成的有源区进行XRD模拟,可以提取厚度和成分并将其用作能带结构计算的输入值,从而可以预测激光器的共振能量可以获得过渡。利用这种技术,可以实现无注入QCL的波长评估,其准确度为3%,这在诸如气体传感的应用中是一项重要的改进。

著录项

  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.480-483|共4页
  • 作者单位

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, Garching 85748, Germany;

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, Garching 85748, Germany;

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, Garching 85748, Germany;

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, Garching 85748, Germany;

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, Garching 85748, Germany;

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, Garching 85748, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Laserepitaxy; B1. Arsenates; B1. Phosphides; B2. Semiconducting III/V materials; B3. Infrared devices; B3. Laserdiodes;

    机译:A3。 Laserepitaxy;B1。砷酸盐;B1。磷化物;B2。半导体III / V材料;B3。红外设备;B3。激光二极管;

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