InAs quantum dot growth on planar InP (1 0 0) by metalorganic vapor-phase epitaxy with a thin GaAs interlayer

摘要

InAs quantum dots (CDs) are grown on planar InP (1 0 0) by metalorganic vapor-phase epitaxy (MOVPE) with a thin GaAs interlayer beneath the QDs. The Q.Ds' structural and optical properties are investigated when varying the GaAs interlayer thickness, growth temperature, and group Ⅴ/Ⅲ ratio and related to As/P exchange, the goal being to obtain high-quality QDs with emission wavelength around 1.55μm.