首页> 外文期刊>Journal of Crystal Growth >Crystal growth, structural, crystalline perfection, optical and mechanical properties of Nd~(3+) doped sulfamic acid (SA) single crystals
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Crystal growth, structural, crystalline perfection, optical and mechanical properties of Nd~(3+) doped sulfamic acid (SA) single crystals

机译:Nd〜(3+)掺杂氨基磺酸(SA)单晶的晶体生长,结构,晶体完善,光学和机械性能

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摘要

Sulfamic acid (SA) single crystals, both pure and doped with 1, 2.5 and 5 mol% Nd, were grown successfully in an aqueous solution by the slow cooling method. Powder X-ray diffraction patterns were recorded to check the variation in the lattice parameters and phase of the crystals. The optical transparency was found to be hig Prod. Type: FTPhest (~80%) for the 1 mol% Nd~(3+) doped SA single crystal. The optical band gap was also calculated and found to be ~4.31,4.20 and 3.67 eV. The influence of Nd~(3+) doping on the crystalline perfection was assessed by a high resolution X-ray diffractometer (HRXRD) and shows that the grown crystals could accommodate Nd~(3+) at the interstitial positions in the crystalline matrix of SA up to some critical concentration without any deterioration in the crystalline perfection. The etching studies were carried out and the etch pits densities were calculated. The mechanical property of grown single crystals was also studied.
机译:通过缓慢冷却方法,在水溶液中成功生长了纯的和掺杂有1、2.5和5 mol%Nd的氨基磺酸(SA)单晶。记录粉末X射线衍射图以检查晶格参数和晶体相的变化。发现光学透明性为高产品。类型:FTPhest(〜80%)用于1摩尔%Nd〜(3+)掺杂的SA单晶。计算出的光学带隙为〜4.31、4.20和3.67 eV。用高分辨率X射线衍射仪(HRXRD)评估了Nd〜(3+)掺杂对晶体完美度的影响,结果表明生长的晶体可以在Nd〜(3+)晶体基质的间隙位置容纳Nd〜(3+)。 SA达到一定的临界浓度,而结晶完整性没有任何降低。进行蚀刻研究并计算蚀刻凹坑密度。还研究了生长的单晶的机械性能。

著录项

  • 来源
    《Journal of Crystal Growth》 |2013年第1期|228-235|共8页
  • 作者单位

    Crystal Growth Lab, Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid 28049, Spain,Advanced Materials Research Lab (AMRL), Department of Physics, Atma Ram Sanatan Dharma (ARSD) College, University of Delhi, New Delhi 110021, India,CSIR-National Physical Laboratory, New Delhi 110012, India;

    CSIR-National Physical Laboratory, New Delhi 110012, India;

    Department of Physics, Kakatiya University, Warangal 506009, India;

    CSIR-National Physical Laboratory, New Delhi 110012, India;

    Bruker AXS Analytical Instruments Pvt. Ltd., New Delhi 110019, India;

    Crystal Growth Lab, Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid 28049, Spain;

    Crystal Growth Lab, Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid 28049, Spain;

    CSIR-National Physical Laboratory, New Delhi 110012, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A.High resolution X-ray diffraction; A2.Growth from solutions; A2.Single crystal growth; B1.Inorganic compounds;

    机译:A.高分辨率X射线衍射;A2。解决方案的增长;A2。单晶生长;B1。无机化合物;

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