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机译:金属有机气相外延(MOVPE)生长的块状InGaAsSbN / GaAs的特征
Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wl 53706, USA;
Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wl 53706, USA;
Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wl 53706, USA;
Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wl 53706, USA;
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245, USA;
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245, USA;
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245, USA;
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245, USA;
A3. metalorganic vapor phase epitaxy; B1. antimonides; B1. nitrides; B2. semiconductingⅢ—Ⅴ materials; B3. solar cells;
机译:热退火对金属有机气相外延生长的块状InGaAsSbN材料的影响
机译:金属有机气相外延生长的窄带隙(1 eV)InGaAsSbN太阳能电池
机译:金属有机气相外延生长的窄带隙(1 eV)InGaAsSbN太阳能电池
机译:金属有机气相外延生长用于太阳能电池的InGaAsN和InGaAsSbN块状材料的特性
机译:金属有机气相外延(MOVPE)的生长和III-氮化物异质结构的表征,用于电子设备。
机译:有机金属气相外延过程中GaN(0001)和(000-1)的CH4吸附概率及其与膜中碳污染的关系
机译:Gaas衬底上金属有机气相外延生长的GaasNGaassb II型量子阱的特性
机译:控制氧掺入金属有机气相外延Gaas的多个深层