机译:商业化多晶圆氢化物气相外延在6英寸晶圆上生长的氮化镓薄膜层的数值模拟
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Republic of Korea;
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Republic of Korea;
TGO tech, Hwasung-City, Gyeonggi-Do, 445-812, Republic of Korea;
TGO tech, Hwasung-City, Gyeonggi-Do, 445-812, Republic of Korea;
TGO tech, Hwasung-City, Gyeonggi-Do, 445-812, Republic of Korea;
Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Republic of Korea;
A1. Computer simulation; A1. Fluid flow; A3. Multi-wafer HVPE; B1. GaN;
机译:通过金属有机气相外延在蓝宝石晶片上生长Ga和N极性氮化镓层
机译:氯化氢气相外延生长的散粒氮化镓单晶的光学性质
机译:氢化物气相外延生长无意掺杂的氮化镓的氧和氢分布及电性能
机译:SiC /(001)Si异质结构氢化物 - 氯化物气相外延生长半极性氮化镓层的透射电子显微镜研究
机译:通过氢化物气相外延生长的非极性氮化镓膜的结构。
机译:出版商更正:氢化物气相外延生长砷化镓太阳能电池的速度超过300 µm h-1
机译:使用新型种子层和可控成核作用,减少金属有机气相外延生长的氮化镓中的位错