机译:在c平面Al_2O_3衬底上外延生长(111)取向Zr_xTi_(1-x)N薄膜
Physics Department, University of Houston, Houston, TX 77004, USA;
Physics Department, University of Houston, Houston, TX 77004, USA;
Physics Department, University of Houston, Houston, TX 77004, USA;
Physics Department, University of Houston, Houston, TX 77004, USA;
Physics Department, University of Houston, Houston, TX 77004, USA;
Physics Department, University of Houston, Houston, TX 77004, USA;
A1. DC reactive magnetron sputtering; A1. Thin films; A1. XRD; A1. AFM; B1. ZrTiN;
机译:钴铁氧体纳米种子层状Pt(111)/ Si衬底上(111)取向Pb(Zr_xTi_(1-x))O_3薄膜的铁电和压电行为
机译:(111)取向立方衬底上外延Ba_xSr_(1-x)TiO_3薄膜相变的现象学理论
机译:在反应溅射中在c平面Al_2O_3上外延生长V_2O_3薄膜并通过后退火将其转变为VO_2薄膜
机译:通过脉冲激光沉积在Si(111)衬底上外延生长原子光滑(111)取向的MgO膜
机译:使用常规和五极外延生长工艺在氢(6)-碳化硅(0001)和硅(111)衬底上生长氮化镓和氮化铝镓薄膜。
机译:简单Sol-Gel法在SrTiO3(111)衬底上正交生长GaFeO3薄膜的外延生长
机译:(100)和(111)取向SrTiO3衬底上外延掺Hf的Bi4Ti3O12薄膜的各向异性电学性能