Fabrication of a P-stabilized GaP (001)-(2×1) surface at very low pressure studied by LEED, STM, AES, and RHEED

摘要

Fabrication of a P-stabilized GaP(001)-(2×1) surface with t-butylphosphine (TBP) at very low pressure (5×10~-7 Torr) has been studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), reflection high-energy electron diffraction (RHEED), and Auger electron spectroscopy (AES). A (3×2) structure is found at small area when a GaP(001)-(2×4) surface was exposed to TBP (70-240L) at 623 K.