Low threshold current densities in red VCSELs

摘要

In this work, we have investigated the design and metalorganic vapor-phase epitaxial growth of red vertical cavity surface-emitting lasers (VCSEL, emission wavelength around 650-680 nm) with respect to low threshold current densities and a reduced temperature dependence. A VCSEL in the red regime implies a combination of AIGaInP (cavity) and AIGaAs/AIAs(distributed Bragg reflectors).