Carbon doping of InAlAs in LP-MOVPE using CBr_4

摘要

Carbon doping in InAlAs material grown with LO-MOVPE has been studied. Carbon tetrabromide (CBr_4) has been used as a source of carbon. We investigated the influence of the growth parameter on the carbon incorporation. Carbon concentrations as high as 3×10~19 cm~-3 were achieved at the low temperature of 530deg.C and the low V/III ratio of 20. Post-thermal annealing was required to activate carbon atoms. Hole concentrations as high as 1.8×10~19 cm~-3 have been Obtained.