Compariosn of carbon doping of InGaAs and GaAs by CBr_4 using hydrogen or nitrogen as carrier gas in LP-MOVPE

摘要

The p-type carrier concentration of MOVPE grown carbon doped InGaAs/InP and GaAs is investigated using H_2 and N_2 as carrier gas. Employing N_2 instead of H_2 halves the growth rate and diminishes the TMGa decomposition in the kinetically limited growth grime. The p-type carrier concentration of GaAs can be doubled by shifting to N_2. In N_2 ambient the maxial p-carrier concentration in InGaAs/InP can be more than doubled compared to the maximal p-doping levels in H_2. Usiong N_2 as carrier gas it impossible to achieve p-type carrier concentrations in InGaAs/InP up to 1x10~19 cm~-3 at temperatures as high as 550 deg C.