Low-temperature growth of GaAs polycrystalline films on glass substrates for space solar cell application

摘要

Preliminary results of growth of gallium arsenide poly-crystalline films on quartz glass substrate are reported. The films were grown using chemical beam epitaxy apparatus at substrate temperatures varied between 400deg.C and 500deg.C The growth of polycrystalline GaAs has been realized at temperatures above 450deg.C. X-ray diffraction (XRD) and Raman Scattering show that the film grown at 500deg.C has good crystallinity.