Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration

摘要

Dislocation-free Si crystals have been grown successfully from heavily B-doped Si melts by Czochralski (CZ) method withour the Dash necking process. NO dislocation was introduced in the heavily B-doped Si seed during dipping andno dislocation was generated in the grown crystal due to lattice misfit between the seed and grown crytal swhen the B concentration is the same in both the Si seed and grown crytal. These results show that the Dash ncking process is unnecessary in heavily B-doped Si crytal growth.