Multi-step pulling of GaInSb bulk crystal from ternary solution

摘要

The solute feeding Czochralski method was applied to the growth of GaInSb alloy from Ga-In-Sb ternary solution. At first, an alloy with 0.04 GaSb mole fraction was grown on an InSb(1 1 1 )B seed. Using the grown alloy as a seed, an alloy with 0.08 GaSb mole fraction was pulled. By adopting a small step in composition less than 0.05, single-crystal growth was maintained in every step. After four steps, the alloy composition of 0.1 7 GaSb mole fraction was achieved. Wafers of about 10 mm diameter with etch pit density of (5-6)× 10~4 cm~(-2) can be produced.